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GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-bandgap semiconductors, resulting in better radiation resistance. Theoretically, it supports higher speeds as the device dimensions could be reduced without suffering voltage breakdown. The simulation and experimental results illustrate the superior performance of the Gallium Nitride High-Electron-Mobility Transistors in an amplifying circuit. Using a spice model for commercially available Gallium Nitride High-Electron-Mobility Transistors, non-distorted output to an input signal of 200 ps was displayed. Real-world measurements underscore the fast response of the Gallium Nitride High-Electron-Mobility Transistors with its measured slew rate at approximately 3000 V/μs, a result only 17% lower than the result obtained from the simulation. This fast response, coupled with the amplifier radiation resistance, shows promise for designing improved detection and imaging circuits with long Mean Time Between Failure required, for example, by next-generation industrial-process gamma transmission-computed tomography.